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DMG1026UV
1.6
1,000
1.4
800
1.2
1.0
I D = 1mA
600
T A = 25°C
0.8
0.6
I D = 250μA
400
0.4
200
0.2
0
-50 -25 0 25 50 75 100 125 150
T A , AMBIENT TEMPERATURE (°C)
Figure 7 Gate Threshold Variation vs. Ambient Temperature
0
0
0.2 0.4 0.6 0.8 1.0 1.2
V SD , SOURCE-DRAIN VOLTAGE (V)
Figure 8 Diode Forward Voltage vs. Current
100
f = 1MHz
10,000
1,000
T A = 150°C
C iss
T A = 125°C
10
C oss
C rss
100
10
T A = 85°C
T A = 25°C
1
0
5 10 15 20 25 30 35
V DS , DRAIN-SOURCE VOLTAGE (V)
Figure 9 Typical Total Capacitance
40
1
0
5
10 15 20 25 30 35 40 45 50
V DS , DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Leakage Current
vs. Drain-Source Voltage
10
10
8
V DS = 15V
I D = 800m A
1
R DS(on)
Limited
P W = 10 μs
6
4
0.1
DC
P W = 10s
P W = 1s
P W = 100ms
P W = 10ms
2
0.01
P W = 1ms
P W = 100μs
0
0
0.2 0.4 0.6 0.8 1.0
Q g , TOTAL GATE CHARGE (nC)
Figure 11 Gate Charge
1.2
0.001
0.1
1 10
V DS , DRAIN-SOURCE VOLTAGE (V)
Figure 12 SOA, Safe Operation Area
100
DMG1026UV
Document number: DS35068 Rev. 6 - 2
4 of 6
www.diodes.com
February 2014
? Diodes Incorporated
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